Effect of profile and size of isolation trench on the optical and electrical performance of GaN-based high-voltage LEDs-Reference-Cited by-同舟云学术

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Effect of profile and size of isolation trench on the optical and electrical performance of GaN-based high-voltage LEDs

Published:2016-03 Issue: Volume:366 Page:299-303
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Zhou Shengjun,Zheng Chenju,Lv Jiajiang,Liu Yingce,Yuan Shu,Liu Sheng,Ding Han

Funder

National Natural Science Foundation of China

National High-tech R&D Program of China

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference24 articles.

1. Realization of crack-free and high-quality thick AlxGa1−xN for UV optoelectronics using low-temperature interlayer

2. Thermal Annealing Effects on P-Type Mg-Doped GaN Films

3. Effects of pre-annealed ITO film on the electrical characteristics of high-reflectance Ni/Ag/Ni/Au contacts to p-type GaN

4. Enhanced luminous efficiency of phosphor-converted LEDs by using back reflector to increase reflectivity for yellow light

5. Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop

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1. Design and Performance of Ultraviolet 368-nm AlGaN-Based Flip-Chip High-Voltage LEDs with Epitaxial Indium Tin Oxide/Al Reflective Mirror and Symmetry Electrode Arrangement;Frontiers in Materials;2022-02-28

2. High Voltage and Vertical LEDs;III-Nitride LEDs;2022

3. Over 700 MHz –3 dB Bandwidth UOWC System Based on Blue HV-LED With T-Bridge Pre-Equalizer;IEEE Photonics Journal;2019-06

4. High-efficiency GaN-based LED with patterned SiO2 current blocking layer deposited on patterned ITO;Optics & Laser Technology;2019-01

5. Research Progress of High-Voltage LED Chip;SPECTROSC SPECT ANAL;2018

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