Strain relaxation of epitaxial SiGe layer and Ge diffusion during Ni silicidation on cap-Si/SiGe/Si(001)-Reference-Cited by-同舟云学术

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Strain relaxation of epitaxial SiGe layer and Ge diffusion during Ni silicidation on cap-Si/SiGe/Si(001)

Published:2006-05 Issue:15 Volume:252 Page:5326-5330
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Jang C.H.,Sardela M.R.,Kim S.-H.,Song Y.-J.,Lee N.-E.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference22 articles.

1. NiSi salicide technology for scaled CMOS

2. Silicides and ohmic contacts

3. Salicides: materials, scaling and manufacturability issues for future integrated circuits (invited)

4. Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology

5. Strained Si CMOS (SS CMOS) technology: opportunities and challenges

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of the growth rate on optical and crystal quality of InGaAs/AlGaAs multi-quantum wells and InGaAs single layer grown by molecular beam epitaxy (MBE);Materials Science in Semiconductor Processing;2025-01

2. Characterization of residual strain in epitaxial Ge layers grown in sub-100 nm width SiO2 trench arrays;Thin Solid Films;2015-04

3. Achieving high-quality In0.3Ga0.7As films on GaAs substrates by low-temperature molecular beam epitaxy;CrystEngComm;2014

4. Impact of various silicide techniques on SiGe source–drain series resistance and mobility of pMOSFETs;Semiconductor Science and Technology;2013-10-18

5. X-ray diffraction analysis of step-graded InxGa1−xAs buffer layers grown by molecular beam epitaxy;Journal of Crystal Growth;2011-05

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