Time-resolved two-photon photoemission study of silicon surface at initial stage of oxidation-Reference-Cited by-同舟云学术

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Time-resolved two-photon photoemission study of silicon surface at initial stage of oxidation

Published:2013-02 Issue: Volume:267 Page:154-158
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Takahashi Kazutoshi,Ishibashi Kazunori,Kurahashi Yusuke,Imamura Masaki,Azuma Junpei,Kamada Masao

Funder

Ministry of Education, Culture, Sports, Science and Technology (MEXT) of Japan

MEXT joint project of Research and Development of Innovative Bio-, Nano- and Environmental Technologies Using Synchrotron Light

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference33 articles.

1. The end of the road for silicon?

2. The electronic structure at the atomic scale of ultrathin gate oxides

3. Determination of the Fermi-level pinning position at Si(111) surfaces

4. Oxygen chemisorption and oxide formation on Si(111) and Si(100) surfaces

5. Microscopic structure of theSiO2/Si interface

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Image potential states at transition metal oxide surfaces: A time-resolved two-photon photoemission study on ultrathin NiO films;Physical Review B;2018-02-16

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