Thermal reliability of thin SiGe epilayers-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Thermal reliability of thin SiGe epilayers

Published:2012-04 Issue:12 Volume:258 Page:5001-5004
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Wu Ming-Jhang,Wen Hua-Chiang,Chiang Tun-Yuan,Tsai Chien-Huang,Hsu Wen-Kuang,Chou Chang-Pin

Funder

National Science Council 291 in Taiwan

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference26 articles.

1. Electrical properties of lightly doped p-type silicon–germanium single crystals

2. Modulation doping in GexSi1−x/Si strained layer heterostructures

3. High hole mobility in SiGe alloys for device applications

4. Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural evolution of Ge-rich Si1−xGex films deposited by jet-ICPCVD;AIP Advances;2015-11

2. Investigations of root strengthening in thermal treated Si0.80Ge0.20 and Si0.75Ge0.25 films;Applied Surface Science;2015-03

3. Tin surface segregation, desorption, and island formation during post-growth annealing of strained epitaxial Ge1−xSnx layer on Ge(001) substrate;Applied Surface Science;2014-12

4. Effect of the nanoscratch resistance of indium nitride thin films in the etching duration;Applied Surface Science;2012-11

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3