Study on formation of step bunching on 6H-SiC (0001) surface by kinetic Monte Carlo method
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference34 articles.
1. Material science and device physics in SiC technology for high-voltage power devices
2. Step bunching behaviour on the {0001} surface of hexagonal SiC
3. Volume production of high quality SiC substrates and epitaxial layers: Defect trends and device applications
4. Growth law of step bunches induced by the Ehrlich–Schwoebel effect in growth
5. Scaling and universality in models of step bunching: the “C+–C-” model
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1. Kinetic Monte Carlo simulation study of the early stages of epitaxial SiC (0001) growth;Journal of Crystal Growth;2023-09
2. Size distribution of clusters and nucleation preference of trimers during SiC (0001) surface epitaxial growth under low coverage;Journal of Vacuum Science & Technology A;2023-06-29
3. Study on three-dimensional critical nucleation on a planar substrate of 3C-SiC crystal;Journal of Crystal Growth;2023-06
4. Modeling-Based Design of the Control Pattern for Uniform Macrostep Morphology in Solution Growth of SiC;Crystal Growth & Design;2023-01-06
5. Effect of Deposition Flux on Polytypic Competitive Growth of SiC Crystal by Kinetic Monte Carlo Method;physica status solidi (b);2022-11-09
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