Investigation of sol–gel derived HfO2 on 4H-SiC
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference21 articles.
1. Electronic properties of SiO2/SiC interfaces;Afanas’ev;Microelectr. Eng.,1999
2. Effect of thermal nitrided gate-oxide thickness on 4H silicon-carbide-based metal-oxide-semiconductor characteristics;Cheong;Appl. Phys. Lett.,2007
3. HfO2-based insulating stacks on 4H-SiC (0001);Afanas’ev;Appl. Phys. Lett.,2003
4. Electrical properties of atomic-layer-deposited La2O3/thermal-nitrided SiO2 stacking dielectric on 4H-SiC (0001);Moon;Meter. Sci. Forum,2007
5. Electronic Properties of atomic-layer-deposited Al2O3/thermal-nitrided SiO2 stacking dielectric on 4H-SiC;Cheong;Electrochem. Solid-State Lett.,2007
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3. Effects of rapid thermal annealing on structural, chemical, and electrical characteristics of atomic-layer deposited lanthanum doped zirconium dioxide thin film on 4H-SiC substrate;APPL SURF SCI;2016
4. Thickness-dependent phase evolution and dielectric property of Hf0.5Zr0.5O2 thin films prepared with aqueous precursor;Journal of Sol-Gel Science and Technology;2015-10-01
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