Effect of treatments of sapphire substrate on growth of GaN film
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference12 articles.
1. GaN blue light emitting diodes prepared by metalorganic chemical vapor deposition
2. Effects of hydrogen in an ambient on the crystal growth of GaN using Ga(CH3)3 and NH3
3. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
4. Analysis of the polar direction of GaN film growth by coaxial impact collision ion scattering spectroscopy
5. Review of polarity determination and control of GaN
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1. Plasma-Induced Surface Modification of Sapphire and Its Influence on Graphene Grown by Plasma-Enhanced Chemical Vapour Deposition;Nanomaterials;2023-06-27
2. N-Polar growth of nitride semiconductors with MOVPE and its applications;Journal of Crystal Growth;2023-03
3. Improvements in structural and optical properties of nonpolar a-plane AlGaN epilayers with nanoscale island-like SiNx interlayer;Journal of Materials Science: Materials in Electronics;2023-01
4. In-situ thermal cleaning of the sapphire substrate and temperature effect on epitaxial AlN;Vacuum;2022-11
5. N-polar GaN Film Epitaxy on Sapphire Substrate without Intentional Nitridation;Materials;2022-04-21
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