Accurate depth profiling of dry oxidized SiGeC thin films by extended Full Spectrum ToF-SIMS-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Accurate depth profiling of dry oxidized SiGeC thin films by extended Full Spectrum ToF-SIMS

Published:2011-09 Issue:22 Volume:257 Page:9414-9419
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Py M.,Saracco E.,Damlencourt J.F.,Barnes J.P.,Fabbri J.M.,Hartmann J.M.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference27 articles.

1. 3D nanowire gate-all-around transistors: specific integration and electrical features;Dupré;Solid-State Electron.,2008

2. Relationship between mobility and high-k interface properties in advanced Si and SiGe nanowires;Tachi,2009

3. High quality Germanium-On-Insulator wafers with excellent hole mobility;Nguyen;Solid-State Electron.,2007

4. A novel fabrication technique of ultrathin and relaxed SiGe buffer layers with high Ge fraction for sub-100nm strained silicon-on-insulator MOSFETs;Tezuka;Jpn. J. Appl. Phys.,2001

5. J.F. Damlencourt, Patent N°EP1892766, 2006.

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Determination of oxygen diffusion in the SnO2/stainless steel interface of thin films by spectrophotometric measurements;Journal of Physics D: Applied Physics;2016-04-20

2. Oxygen diffusion at high temperatures within the SnO2/Sst interlayer in sputtered thin films;Applied Surface Science;2015-12

3. Superconducting Gallium Implanted Germanium;Subsecond Annealing of Advanced Materials;2014

4. Superconducting Ga-overdoped Ge layers capped with SiO2: Structural and transport investigations;Physical Review B;2012-04-27

5. Accurate depth profiling of oxidized SiGe (intrinsic or doped) thin films by extended Full Spectrum ToF-SIMS;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-02

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3