3D nanowire gate-all-around transistors: Specific integration and electrical features-Reference-Cited by-同舟云学术

3D nanowire gate-all-around transistors: Specific integration and electrical features

Published:2008-04 Issue:4 Volume:52 Page:519-525
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Dupré C.,Ernst T.,Maffini-Alvaro V.,Delaye V.,Hartmann J.-M.,Borel S.,Vizioz C.,Faynot O.,Ghibaudo G.,Deleonibus S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

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4. Layout density analysis of FinFETs;Anil;Proc ESSDERC,2003

5. Novel 3D integration process for highly scalable nano-beam stacked-channels GAA (NBG) FinFETs with HfO2/TiN gate stack;Ernst;Tech Dig Int Electr Dev Meet,2006

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