The properties of gallium oxide thin film grown by pulsed laser deposition-Reference-Cited by-同舟云学术

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The properties of gallium oxide thin film grown by pulsed laser deposition

Published:2015-12 Issue: Volume:359 Page:847-852
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Feng Qian,Li Fuguo,Dai Bo,Jia Zhitai,Xie Wenlin,Xu Tong,Lu Xiaoli,Tao Xutang,Zhang Jincheng,Hao Yue

Funder

Basic Science Research Fund for the Central Universities

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference38 articles.

1. Subnanometer Ga2O3 tunneling layer by atomic layer deposition to achieve 1.1V open-circuit potential in dye-sensitized solar cells;Chandiran;Nano Lett.,2012

2. Fabrication of β-Ga2O3 thin films and solar-blind photodetector by laser MBE technology;Guo;Opt. Mater. Express,2014

3. Gallium oxide(Ga2O3) metal-semiconductor field-effect transistors on single-crystal Ga2O3(010) substrates;Higashiwaki;Appl. Phys. Lett.,2012

4. Ga2O3 films for electronic and optoelectronic applications;Passlack;J. Appl. Phys.,1995

5. Surface morphology of homo-epitaxial β-Ga2O3 thin films grown by molecular beam epitaxy;Oshima;Thin Solid Films,2008

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