Arsenic shallow depth profiling: accurate quantification in SiO2/Si stack-Reference-Cited by-同舟云学术

Arsenic shallow depth profiling: accurate quantification in SiO2/Si stack

Published:2004-06 Issue: Volume:231-232 Page:632-635
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Barozzi M.,Giubertoni D.,Anderle M.,Bersani M.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference7 articles.

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3. High precision measurements of arsenic and phosphorous implantation dose in silicon by secondary ion mass spectrometry

4. Tomita, et al., Appl. Surf. Sci. 203–204 (2003) 465.

5. M. Anderle, M. Barozzi, M. Bersani, D. Giubertoni, P. Lazzeri, in: D.G. Seiler, A.C. Diebold, T.J. Shaffner, S. Zollner, R.P. Khosla, E.M. Secula (Eds.), AIP Conference Proceedings 683 (2003) 695–704.

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