SIMS round-robin study of depth profiling of arsenic implants in silicon-Reference-Cited by-同舟云学术

SIMS round-robin study of depth profiling of arsenic implants in silicon

Published:2003-01 Issue: Volume:203-204 Page:465-469
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Tomita M.,Hasegawa T.,Hashimoto S.,Hayashi S.,Homma Y.,Kakehashi S.,Kazama Y.,Koezuka K.,Kuroki H.,Kusama K.,Li Z.,Miwa S.,Miyaki S.,Okamoto Y.,Okuno K.,Saito S.,Sasaki S.,Shichi H.,Shinohara H.,Toujou F.,Ueki Y.,Yamamoto Y.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference2 articles.

1. Y. Okamoto, et al., in: Proceedings of the XIth Secondary Ion Mass Spectrometry (SIMS), Wiley, New York, 1998, p. 1047.

2. F. Toujou, M. Tomita, Y. Okamoto, S. Hayashi, A. Yamamoto, Y. Homma, in: Proceedings of the XIIth Secondary Ion Mass Spectrometry (SIMS), Elsevier, Amsterdam, 2000, p. 101.

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