Calibration correction of ultra low energy SIMS profiles based on MEIS analyses for arsenic shallow implants in silicon
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference6 articles.
1. Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants
2. Arsenic shallow depth profiling: accurate quantification in SiO2/Si stack
3. Advanced secondary ion mass spectroscopy quantification in the first few nanometer of B, P, and As ultrashallow implants
4. Characterization by medium energy ion scattering of damage and dopant profiles produced by ultrashallow B and As implants into Si at different temperatures
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Complementary characterization method of 3D arsenic doping by using medium energy ion scattering;Journal of Physics Communications;2021-01-01
2. Characterization of arsenic plasma doping and postimplant processing of silicon using medium energy ion scattering;Journal of Vacuum Science & Technology B;2019-05
3. Use of TRIDYN and medium energy ion scattering to calibrate an industrial arsenic plasma doping process;Journal of Vacuum Science & Technology B;2019-05
4. JGIXA — A software package for the calculation and fitting of grazing incidence X-ray fluorescence and X-ray reflectivity data for the characterization of nanometer-layers and ultra-shallow-implants;Spectrochimica Acta Part B: Atomic Spectroscopy;2016-04
5. Evolution of arsenic in high fluence plasma immersion ion implanted silicon: Behavior of the as-implanted surface;Applied Surface Science;2015-11
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3