Ion beam synthesis of 3C-SiC layers in Si and its application in buffer layer for GaN epitaxial growth-Reference-Cited by-同舟云学术

Ion beam synthesis of 3C-SiC layers in Si and its application in buffer layer for GaN epitaxial growth

Published:2004-11 Issue:1-4 Volume:238 Page:159-164
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Ito Y.,Yamauchi T.,Yamamoto A.,Sasase M.,Nishio S.,Yasuda K.,Ishigami Y.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference8 articles.

1. FORMATION OF SiC IN SILICON BY ION IMPLANTATION

2. Ion beam synthesis of buried SiC layers in silicon: Basic physical processes

3. Ion beam induced crystallization effect and growth kinetics of buried SiC layers formed by carbon implantation into silicon

4. Y. Ito, R. Ishigami, K. Yasuda, S. Hatori, A. Yamamoto, in: Proceedings of the 2000 International Conference on Ion Implantation Technology, Alpbach, Austria, 2000, p. 793.

5. Infrared Properties of Hexagonal Silicon Carbide

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