Energetics and kinetics for Si–Ge intermixing on Ge-adsorbed hydrogenated Si(100) surfaces
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference27 articles.
1. Surfactants in epitaxial growth
2. Growth morphology and the equilibrium shape: The role of ‘‘surfactants’’ in Ge/Si island formation
3. Dimer exchange mechanism for substitutional As adsorption on Si(100)
4. Formation and decomposition ofGexSil−x(100)(2×1):H andGexSil−x(100)(1×):2H
5. Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scattering
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. GeH4 adsorption on Si(001) at RT: transfer of H atoms to Si sites and atomic exchange between Si and Ge;Applied Surface Science;2004-03
2. Multiple-internal-reflection Fourier-transformed Infrared Spectroscopy of Silane-/germane-adsorbed Si(001) Surface and Hydrogen Desorption Process;Hyomen Kagaku;2004
3. Quantitative Analysis of Hydrogen-Induced Si Segregation on Ge-Covered Si(001) Surface;Japanese Journal of Applied Physics;2003-05-01
4. First-principle calculations for mechanisms of semiconductor epitaxial growth;Journal of Crystal Growth;2002-04
5. Kinetic Monte Carlo simulation of intermixing during semiconductor heteroepitaxy;Applied Surface Science;2002-03
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