Formation and decomposition ofGexSil−x(100)(2×1):H andGexSil−x(100)(1×):2H
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.33.2999/fulltext
Reference9 articles.
1. Pseudomorphic growth of GexSi1−xon silicon by molecular beam epitaxy
2. GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy
3. Monohydride and dihydride formation at Si(100) 2x1: A high resolution electron energy loss spectroscopy study
4. Coverage- and temperature-dependent vibrational spectra of hydrogen chemisorbed on Si(100)2 × 1
5. Reinterpretation of the silicon-hydrogen stretch frequencies in amorphous silicon
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1. Influence of hydrogen surface passivation on Sn segregation, aggregation, and distribution in GeSn/Ge(001) materials;Journal of Applied Physics;2015-05-28
2. Thermodynamically driven Ge/Si place exchange induced by hydrogen on Ge-covered Si(001) surfaces;Physical Review B;2000-03-15
3. Hydrogen population on Ge-covered Si(001) surfaces;Physical Review B;1999-08-15
4. Energetics and kinetics for Si–Ge intermixing on Ge-adsorbed hydrogenated Si(100) surfaces;Surface Science;1999-08
5. Metal–semiconductor transition observed by HREELS on the surface of Si1−xGex/Si(001) grown by CTL-CVD at 620 K;Surface Science;1999-06
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