First principles calculations of the local arrangement of silicon hydrides on the Si()-c(2×4) surface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference16 articles.
1. Adsorption kinetics of SiH4, Si2H6 and Si3H8 on the Si(111)-(7×7) surface
2. Decomposition mechanisms of SiHx species on Si(100)‐(2×1) for x=2, 3, and 4
3. A RHEED study of the surface reconstructions of Si(001) during gas source MBE using disilane
4. Adsorption of phosphorus on Si(111): Structure and chemical reactivity
5. Adsorption and thermal dissociation of disilane (Si2H6) on Si(100)2×1
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1. Si(100)2×1 Epitaxy: A Kinetic Monte Carlo Simulation of the Surface Growth;Physics Procedia;2013
2. Kinetic Monte Carlo simulation of the epitaxial growth of Si(100);physica status solidi (c);2012-09-11
3. Chemisorption of 4-(4-amino-phenylazo) benzoic acid molecule on the Si(001)-(4×2) surface;Surface Science;2007-09
4. Decomposition ofSiH3toSiH2on Si(100)-(2×1);Physical Review B;2006-11-28
5. Binding sites for SiH2/Si(001): A combined ab initio, tight-binding, and classical investigation;Surface Science;2006-10
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