Mechanism and activation energy barrier for H abstraction by H(D) from a-Si:H surfaces-Reference-Cited by-同舟云学术

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Mechanism and activation energy barrier for H abstraction by H(D) from a-Si:H surfaces

Published:2002-08 Issue:1 Volume:515 Page:L469-L474
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Agarwal Sumit,Sriraman Saravanapriyan,Takano Akihiro,van de Sanden M.C.M,Aydil Eray S,Maroudas Dimitrios

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference30 articles.

1. Plasma deposition of hydrogenated amorphous silicon: Studies of the growth surface

2. Photovoltaic Technology: The Case for Thin-Film Solar Cells

3. Etching, Insertion, and Abstraction Reactions of Atomic Deuterium with Amorphous Silicon Hydride Films

4. Evidence for atomic H insertion into strained Si–Si bonds in the amorphous hydrogenated silicon subsurface fromin situinfrared spectroscopy

5. Hydrogen release kinetics during reactive magnetron sputter deposition ofa‐Si:H: An isotope labeling study

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1. Atomic layer deposition of silicon-based dielectrics for semiconductor manufacturing: Current status and future outlook;Journal of Vacuum Science & Technology A;2019-12

2. Synthesis of silicon quantum dots using cyclohexasilane (Si6H12);Journal of Materials Chemistry C;2016

3. Etching of a-Si:H thin films by hydrogen plasma: A view from in situ spectroscopic ellipsometry;The Journal of Chemical Physics;2014-08-28

4. Computational Study for Reactions of H Atoms with Adsorbed SiH3 and Si2H5 on H-Covered Si(100)-(2 × 1) Surface;The Journal of Physical Chemistry C;2014-08-22

5. Low activation energy for the crystallization of amorphous silicon nanoparticles;Nanoscale;2014

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