Reflection high-energy electron diffraction intensity oscillations during growth of GaN(0001)A by plasma-assisted molecular beam epitaxy-Reference-Cited by-同舟云学术

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Reflection high-energy electron diffraction intensity oscillations during growth of GaN(0001)A by plasma-assisted molecular beam epitaxy

Published:2000-01 Issue:2-3 Volume:445 Page:L71-L75
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Seutter S.M.,Xie M.H.,Zhu W.K.,Zheng L.X.,Wu H.S.,Tong S.Y.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference13 articles.

1. GaN, AlN, and InN: A review

2. Formation of phase intergrowth in the syntheses of Bi-superconducting thin films

3. GaN Growth Using GaN Buffer Layer

4. Reflection High Energy Electron Diffraction Imaging of Surfaces,1988

5. Dynamics of film growth of GaAs by MBE from Rheed observations

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1. GaN in different dimensionalities: Properties, synthesis, and applications;Materials Science and Engineering: R: Reports;2019-10

2. Real-time monitoring and control of nitride growth rates by Metal Modulated Epitaxy;Journal of Crystal Growth;2019-07

3. Structures and stability of polar GaN thin films on ScAlMgO4 substrate: An ab initio-based study;Journal of Crystal Growth;2017-06

4. Effective approach for accurately calculating individual energy of polar heterojunction interfaces;Physical Review B;2016-09-06

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