Structural analysis of GaAs( 001 )-c(4×4) with LEED IV technique
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference17 articles.
1. Atomic structure and faulted boundaries in the GaAs(001)β(2×4)surface as derived from x-ray diffraction and line-shape analysis
2. Fractional Stoichiometry of the GaAs(001)c(4×4)Surface: AnIn-SituX-Ray Scattering Study
3. GaAsc(4×4) surface structure in organometallic vapor-phase epitaxy
4. Structure of GaAs(100)-c(8×2)-Ga
5. Surface bond angle and bond lengths of rearranged As and Ga atoms on GaAs(110)
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1. Diffusion of Ga adatoms at the surface of GaAs(001)c(4×4)αandβreconstructions;Physical Review B;2015-02-11
2. 5.8.10 Ga;Physics of Solid Surfaces;2015
3. Origin of symmetric STM images for the asymmetric atomic configuration on GaAs(001)–c(4×4)α surfaces;Surface Science;2014-07
4. Symmetric–asymmetric transformation of an image on GaAs(001)-c(4 × 4)α surface using scanning tunneling microscopy;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2012-11
5. Surface reconstructions on GaAs(001);Surface Science Reports;2008-07
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