Surface bond angle and bond lengths of rearranged As and Ga atoms on GaAs(110)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.17.3303/fulltext
Reference18 articles.
1. Photoemission studies of surface and interface states on III–V compounds
2. Synchrotron radiation studies of electronic structure and surface chemistry of GaAs, GaSb, and InP
3. Electronic surface properties of III–V semiconductors: Excitonic effects, band‐bending effects, and interactions with Au and O adsorbate layers
4. Work function variations of gallium arsenide cleaved single crystals
5. Relaxation effects on the (110) surface of GaAs
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