New features of the Si()-c(4×4) reconstruction observed with STM: suggestion of the structure with lowered symmetry-Reference-Cited by-同舟云学术

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New features of the Si()-c(4×4) reconstruction observed with STM: suggestion of the structure with lowered symmetry

Published:2002-01 Issue:1-3 Volume:497 Page:47-58
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Goryachko A,Melnik P.V,Nakhodkin N.G,Afanasjeva T.V,Koval I.F

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference40 articles.

1. Proceedings of the 17th International Conference on the Physics of Semiconductors;Pandey,1985

2. Structural model of Si(100)-c(4×4)

3. Real-time scanning tunneling microscopy observation of Si(100)−(2 × 1)→(2 × n)→c(4 × 4) structural phase transitions

4. The Si(001) c(4×4) surface reconstruction: a comprehensive experimental study

5. Influence of carbon on the formation of the Si(001) c(4×4) surface reconstruction

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1. Sn-induced c(4×4) reconstruction on the C-incorporated Si(001)-4∘ off surface;Surface Science;2023-04

2. Increased Stability of Subsurface C Induced by Ca on the C-Incorporated Si(001)-4°-off Substrate;Journal of the Korean Physical Society;2020-06

3. On Some Important Results in Semiconductor Surface Science Obtained in Ukraine during the Independence Years (1991-2016);Ukrainian Journal of Physics;2017-01

4. Scanning Tunneling Microscopy Investigation of the Si(001)-c(8 x 8) Nanostructured Surface;Ukrainian Journal of Physics;2015-02

5. Phase transition on the Si(001) clean surface prepared in UHV MBE chamber: a study by high-resolution STM and in situ RHEED;Nanoscale Research Letters;2011-03-14

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