Influence of carbon on the formation of the Si(001) c(4×4) surface reconstruction
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference14 articles.
1. Scanning tunnelling microscopy of the interaction of hydrogen with silicon surfaces
2. Amorphous and Crystalline Silicon Carbide IV;Iyer,1992
3. Is the c(4×4) reconstruction of Si(001) associated with the presence of carbon?
4. Observation of the formation of a carbon-rich surface layer in silicon
5. Epitaxial growth ofSi1−yCyalloys characterized as self-organized, ordered, nanometer-sized C-rich aggregates in monocrystalline Si
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1. Calculation of surface energy and simulation of reconstruction for diamond cubic crystals (001) surface;Applied Surface Science;2008-04
2. Missing row reconstructed (110), (211) and (311) surfaces for FCC transition metals;Surface and Interface Analysis;2007
3. Reconstructed (110) surfaces of FCC transition metals;Journal of Physics and Chemistry of Solids;2006-08
4. HREELS, STM, and LEED studies of theSi(100)−c(4×4)surface at 100 and300K: Formation of Si-C surface dimers;Physical Review B;2006-06-28
5. Reflection high-energy electron diffraction study of molecular beam epitaxy growth of Pr2O3 on Si(001);Journal of Crystal Growth;2006-04
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