Epitaxial growth ofSi1−yCyalloys characterized as self-organized, ordered, nanometer-sized C-rich aggregates in monocrystalline Si
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.54.10559/fulltext
Reference18 articles.
1. Strain-stabilized highly concentrated pseudomorphicSi1−xCxlayers in Si
2. Enhanced Solubility of Impurities and Enhanced Diffusion near Crystal Surfaces
3. Observation of the formation of a carbon-rich surface layer in silicon
4. Synthesis of epitaxial Si1 − yCy alloys on Si(001) with high level of non-usual substitutional carbon incorporation
5. A particular epitaxial Si1 − yCy alloy growth mode on Si(001) evidenced by cross-sectional transmission electron microscopy
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2. Phase transformations and ordering effects in nanocrystalline carbon-containing silicon films;Bulletin of the Russian Academy of Sciences: Physics;2009-07
3. On the influence of elastic strain on the accommodation of carbon atoms into substitutional sites in strained Si:C layers grown on Si substrates;Applied Physics Letters;2009-04-06
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