First-principles study of atomic wires on a H-terminated Si(100)-(2 × 1) surface-Reference-Cited by-同舟云学术

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First-principles study of atomic wires on a H-terminated Si(100)-(2 × 1) surface

Published:1997-10 Issue:1-3 Volume:386 Page:340-342
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Watanabe S.,Ono Y.A.,Hashizume T.,Wada Y.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference13 articles.

1. Confinement of Electrons to Quantum Corrals on a Metal Surface

2. Surface modification of MoS2 using an STM

3. Deposition and subsequent removal of single Si atoms on the Si(111)-7×7 surface by a scanning tunneling microscope

4. Atomic-Scale Desorption Through Electronic and Vibrational Excitation Mechanisms

5. A proposal of nanoscale devices based on atom/molecule switching

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1. Ionic charge distributions in silicon atomic surface wires;Nanoscale;2021

2. Spin transport in dangling-bond wires on doped H-passivated Si(100);Nanotechnology;2014-10-30

3. Electron transport through dangling-bond silicon wires on H-passivated Si(100);Journal of Physics: Condensed Matter;2012-11-29

4. First-Principles Simulations of Electronic Transport in Dangling-Bond Wires;Architecture and Design of Molecule Logic Gates and Atom Circuits;2012-10-26

5. Self-assembled nanowires on semiconductor surfaces;Journal of Materials Science;2006-07

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