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Electron transport through dangling-bond silicon wires on H-passivated Si(100)

Published:2012-11-29 Issue:2 Volume:25 Page:025503
ISSN:0953-8984
Container-title:Journal of Physics: Condensed Matter
language:
Short-container-title:J. Phys.: Condens. Matter

Author:

Kepenekian Mikaël,Novaes Frederico D,Robles Roberto,Monturet Serge,Kawai Hiroyo,Joachim Christian,Lorente Nicolás

Publisher

IOP Publishing

Subject

Condensed Matter Physics,General Materials Science

Reference40 articles.

1. Electronics using hybrid-molecular and mono-molecular devices

2. Silicon Device Scaling to the Sub-10-nm Regime

3. A single-atom transistor

4. Ohm’s Law Survives to the Atomic Scale

5. Endotaxial Si nanolines in Si(001):H

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