Electronic states in a-Si:H/c-Si heterostructures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference20 articles.
1. Interface-layer formation mechanism ina−Si:Hthin-film growth studied by real-time spectroscopic ellipsometry and infrared spectroscopy
2. Spectroscopic investigations of hydrogen termination, oxide coverage, roughness, and surface state density of silicon during native oxidation in air
3. Low-Energy Yield Spectroscopy as a Novel Technique for Determining Band Offsets: Application to thec−Si(100)/a−Si:HHeterostructure
4. Density distribution of gap states in extremely thin a-Si:H layers on crystalline silicon wafers
5. Conduction-Band Density of States in Hydrogenated Amorphous Silicon Determined by Inverse Photoemission
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