Interface-layer formation mechanism ina−Si:Hthin-film growth studied by real-time spectroscopic ellipsometry and infrared spectroscopy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.60.13598/fulltext
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5. In situ characterization of the growing a-Si:H surface by IR spectroscopy
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