Electrical Interface Characterization of Ultrathin Amorphous Silicon Layers on Crystalline Silicon-Reference-Cited by-同舟云学术

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Electrical Interface Characterization of Ultrathin Amorphous Silicon Layers on Crystalline Silicon

Published:2020-11-25 Issue:2 Volume:218 Page:2000079
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Thoma Patrick¹^ORCID,Breyer Evelyn Tina¹,Thoma Oana‐Maria¹,Salvan Georgeta¹,Zahn Dietrich R. T.¹

Affiliation:

1. Semiconductor Physics Technische Universität Chemnitz D‐09107 Chemnitz Germany

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202000079

Reference57 articles.

1. Nature of doped a-Si:H/c-Si interface recombination

2. Thermal, Structural and Electrical Study of the Effect of Annealing on the Passivation by Amorphous Silicon of n-type Crystalline (100) Silicon Surfaces

3. Understanding of a-Si:H(p)/c-Si(n) heterojunction solar cell through analysis of cells with point-contacted p/n junction

4. On the Efficiency Limit of Conjugated Polymer:Fullerene-Based Bulk Heterojunction Solar Cells

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