Disorder-induced nucleation in the nanocrystalline silicon film growth from chlorinated materials by rf plasma-enhanced chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference15 articles.
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4. Enhancement of the deposition rate of a-Si:H by introduction of an electronegative molecule into a silane discharge
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1. Chemical and structural properties of polymorphous silicon thin films grown from dichlorosilane;Applied Surface Science;2013-11
2. Understanding the Parameters Affecting the Photoluminescence of Silicon Nanoparticles;The Journal of Physical Chemistry C;2012-05-15
3. Effects of hydrogen dilution on deposition process of nano-crystalline silicon film by SiCl4/H2plasma;Journal of Physics D: Applied Physics;2006-06-30
4. Synthesis of novel p-type nanocrystalline silicon from SiH2Cl2 and SiCl4 by rf plasma-enhanced chemical vapor deposition;Thin Solid Films;2006-05
5. Effect of hydrogen dilution on structure and optical properties of polycrystalline silicon films;Acta Physica Sinica;2006
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