Density-functional calculation of hyperfine interaction constants of dangling bond and weak bond in GeN and SiN films
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. ESR Study of a-Ge1-xNx Prepared by Magnetron Sputtering
2. Preparation and properties of a-Gel−χNχ
3. Defects in amorphous Si-N films prepared by RF sputtering
4. Electron-nuclear double resonance of dangling-bond centres in a-Si1−xNx:H and a-Si1−xNx
5. Calculations of the g-value and linewidth of the esr signal in amorpous silicon nitride
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. (Invited) Identification of Intrinsic Point Defects at GexSi1-x/Oxide Interfaces by ESR Probing;ECS Transactions;2010-10-01
2. Observation of a paramagnetic defect at the epitaxial Ge3N4/(111)Ge interface by electron spin resonance;Thin Solid Films;2010-02
3. Trigonal paramagnetic interface defect in epitaxial Ge3N4/(111)Ge;Applied Physics Letters;2009-11-02
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