Electron-nuclear double resonance of dangling-bond centres in a-Si1−xNx:H and a-Si1−xNx-Reference-Cited by-同舟云学术

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Electron-nuclear double resonance of dangling-bond centres in a-Si1−xNx:H and a-Si1−xNx

Published:1989-12 Issue: Volume:114 Page:426-428
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Yokomichi Haruo,Kondo Michio,Morigaki Kazuo

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference3 articles.

1. Electron-nuclear double resonance of dangling-bond centres in a-Si:H

2. Electron Spin Resonance of Transition Metal Complexes;Goodman,1970

3. Optical Effects in Amorphous Semiconductors;Hirabayashi,1984

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1. Silicon Radicals in Silicon Oxynitride: A Theoretical ESR Study;The Journal of Physical Chemistry A;2006-06-17

2. Density functional calculations of dangling bonds for CN and SiN films;Solid State Communications;2005-04

3. Density-functional calculation of hyperfine interaction constants of dangling bond and weak bond in GeN and SiN films;Journal of Non-Crystalline Solids;2004-06

4. Capturing Properties of Two-Fold Coordinated Nitrogen Atom in Silicon Oxynitride;MRS Proceedings;1999

5. Effects of heavy plasma atoms on spin centers in reactively sputtered SiN films;Thin Solid Films;1996-05

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