Calculations of the g-value and linewidth of the esr signal in amorpous silicon nitride
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. Electron Spin Resonance in Discharge-Produced Silicon Nitride
2. , , and , Solar Energy Mater., to be published.
3. A simple molecular orbital calculation of ESR g-values for amorphous Si1−xCx, Si1−xGex and Ge1−xCx
4. Electronic structures ofβ- andα-silicon nitride
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