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Amorphous silicon pixel radiation detectors and associated thin film transistor electronics readout

Published:1993-05 Issue: Volume:32 Page:287-295
ISSN:0920-5632
Container-title:Nuclear Physics B - Proceedings Supplements
language:en
Short-container-title:Nuclear Physics B - Proceedings Supplements

Author:

Perez-Mendez V.,Cho G.,Drewey J.,Jing T.,Kaplan S.N.,Mireshghi A.,Wildermuth D.,Goodman C.,Fujieda I.

Publisher

Elsevier BV

Subject

Nuclear and High Energy Physics,Atomic and Molecular Physics, and Optics

Reference19 articles.

1. Measurements of depletion layers in hydrogenated amorphous silicon

2. Physics and Applications of Amorphous and Microcrystalline Semiconductor Devices;Perez-Mendez,1991

3. Charge Collection in a-Si:H Particle Detectors

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of heavy ions on a-Si:H/PolySi bilayer thin film transistors with Schottky barrier source and drain based on Nickel Silicide;Memories - Materials, Devices, Circuits and Systems;2024-04

2. Preliminary study on Fe Gd alloys as binary alloys and master alloys for potential spent nuclear fuel (SNF) application;Materials & Design;2020-09

3. Modeling a Thick Hydrogenated Amorphous Silicon Substrate for Ionizing Radiation Detectors;Frontiers in Physics;2020-05-08

4. Mechanical and Electrical properties of Hydrogen or Helium Diluted a-Si:H Prepared at Low Temperatures;MRS Proceedings;1996

5. Thick (∼ 50 μm) amorphous silicon p-i-n diodes for direct detection of minimum ionizing particles;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1995-11

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