Charge Collection in a-Si:H Particle Detectors-Reference-Cited by-同舟云学术

Charge Collection in a-Si:H Particle Detectors

Published:1989 Issue: Volume:149 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Pochet T.,Dubeau J.,Hamel L. A.,Equer B.,Karar A.

Abstract

ABSTRACTThe signal produced by protons in a-Si:H detectors has been measured. The charge collected from a 5.8 μm p-i-n diode is studied as a function of the reverse bias and the energy deposited in the detector. The charge collection process is discussed. Limits on the pair-creation energy, Ep, are obtained (3.4 eV<Ep< 4.5 eV).

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference13 articles.

1. Bandgap Dependence and Related Features of Radiation Ionization Energies in Semiconductors

2. Response of a-Si:H Detectors to Protons and Alphas

3. Detection of minimum-ionizing particles in hydrogenated amorphous silicon

4. Detection of Charged Particles in Amorphous Silicon Layers

5. Detection of charged particles in amorphous silicon layers

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