Study of operating condition of semiconductors for calorimetry in LHC/SSC radiation environment-Reference-Cited by-同舟云学术

Study of operating condition of semiconductors for calorimetry in LHC/SSC radiation environment

Published:1991-07 Issue:1 Volume:23 Page:352-355
ISSN:0920-5632
Container-title:Nuclear Physics B - Proceedings Supplements
language:en
Short-container-title:Nuclear Physics B - Proceedings Supplements

Author:

Borchi E.,Bosetti M.,Furetta C.,Leroy C.,Macii R.,Manoukian-Bertrand C.,Paludetto R.,Pensotti S.,Pessina G.,Rancoita P.G.,Seidman A.,Terzi G.,Vismara L.

Publisher

Elsevier BV

Subject

Nuclear and High Energy Physics,Atomic and Molecular Physics, and Optics

Reference5 articles.

1. Deep-level transient spectroscopy measurements of majority carrier traps in neutron irradiated n-type silicon detectors

2. Conparison of Neutron and 2 MeV Electron Damage in N-Type Silicon by Deep-Level Transient Spectroscopy

3. E. Borchi et al., Leakage current, annealing, and deep defect production studies in neutron irradiated n-type Si-detectors. Submitted for publication.

4. Fast front-end electronics for experiments using silicon calorimeters at SSC/LHC colliders

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