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DLTS measurement of energetic levels, generated in silicon detectors

  • Published:1995-07 Issue:3 Volume:361 Page:461-465
  • ISSN:0168-9002
  • Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
  • language:en
  • Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Bosetti M.,Croitoru N.,Furetta C.,Leroy C.,Pensotti S.,Rancoita P.G.,Rattaggi M.,Redaelli M.,Rizzatti M.,Seidman A.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Defect characterization of unannealed neutron transmutation doped silicon by means of deep temperature microwave detected photo induced current transient spectroscopy;Journal of Applied Physics;2020-01-21

2. HALL COEFFICIENT DEPENDENCE ON RESISTIVITY DOWN TO CRYOGENIC TEMPERATURES IN SILICON SAMPLES IRRADIATED WITH NEUTRONS AND 12C-IONS;Astroparticle, Particle and Space Physics, Detectors and Medical Physics Applications;2010-04

3. Particle interaction and displacement damage in silicon devices operated in radiation environments;Reports on Progress in Physics;2007-03-08

4. Radiation damages induced in n-type silicon by ions and neutrons;Nuclear Physics B - Proceedings Supplements;1999-08

5. Damage induced in semiconductors by swift heavy ion irradiation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-07
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