Surface oxidation of Si assisted by irradiation with large gas cluster ion beam in an oxygen atmosphere
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference10 articles.
1. Low-Temperature Growth (400<tex>$^circhboxC$</tex>) of High-Integrity Thin Silicon–Oxynitride Films by Microwave-Excited High-Density Kr–O<tex>$_2$</tex>–<tex>$hboxNH_3$</tex>Plasma
2. Optimization of nitrided gate dielectrics by plasma-assisted and rapid thermal processing
3. Non-linear processes in the gas cluster ion beam modification of solid surfaces
4. Gas cluster ion beam processing of gallium antimonide wafers for surface and sub-surface damage reduction
5. Gas cluster ion beam infusion processing of semiconductors
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1. In situ X-ray photoelectron spectroscopy study of gas cluster ion beam etching of FeCo film;Japanese Journal of Applied Physics;2014-01-01
2. Gas Cluster Ion Beam Etching under Acetic Acid Vapor for Etch-Resistant Material;Japanese Journal of Applied Physics;2013-05-01
3. Development of Cu Etching Using O$_{2}$ Cluster Ion Beam under Acetic Acid Gas Atmosphere;Japanese Journal of Applied Physics;2012-08-20
4. Development of Cu Etching Using O2Cluster Ion Beam under Acetic Acid Gas Atmosphere;Japanese Journal of Applied Physics;2012-08-01
5. Atomic spectrometry update. Atomic mass spectrometry;Journal of Analytical Atomic Spectrometry;2008
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