Topography simulation of sputtering using an algorithm with second order approximation in space-Reference-Cited by-同舟云学术

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Topography simulation of sputtering using an algorithm with second order approximation in space

Published:2011-07 Issue:14 Volume:269 Page:1614-1618
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Budil Matthias,Hobler Gerhard

Funder

Austrian Research Promotion Agency

Austrian Federal Ministry for Transport, Innovation and Technology

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference11 articles.

1. Introduction to Focused Ion Beams;Giannucci,2005

2. A review of focused ion beam applications in microsystem technology;Reyntjens;J. Micromech. Microeng.,2001

3. Recent developments in micromilling using focused ion beam technology;Tseng;J. Micromech. Microeng.,2003

4. A general simulator for VLSI lithography and etching processes: Part I–Application to projection lithography, IEEE Trans;Oldham;Electron. Dev.,1979

5. Simulation of surface topography evolution during plasma etching by the methods of characteristics;Arnold;J. Vac. Sci. Technol.,1994

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2. Ripple structures on ion bombarded surfaces arising from the sputter yield dependence on incidence angle;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2015-06

3. Nanoimprint activities in Austria in the research project cluster NILaustria;SPIE Proceedings;2012-04-16

4. Ion multi-beam direct sputtering of Si imprint stamps and simulation of resulting structures;Journal of Micromechanics and Microengineering;2012-04-13

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