Realization of critical distance during the interplay between re-deposition and secondary sputtering from milling of angular side wall with a focused ion beam-Reference-Cited by-同舟云学术

Realization of critical distance during the interplay between re-deposition and secondary sputtering from milling of angular side wall with a focused ion beam

Published:2011-07 Issue:13 Volume:269 Page:1540-1547
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Saraf Laxmikant V.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference18 articles.

1. Redeposition effects in transmission electron microscope specimens of FeAl–WC composites prepared using a focused ion beam

2. Influence of the Redeposition effect for Focused Ion Beam 3D Micromachining in Silicon

3. Redeposition—A serious problem in rf sputter etching of structures with micronmeter dimensions

4. Redeposition: a factor in ion-beam etching topography

5. Dual-beam focused ion beam/electron microscopy processing and metrology of redeposition during ion–surface 3D interactions, from micromachining to self-organized picostructures

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