Realization of critical distance during the interplay between re-deposition and secondary sputtering from milling of angular side wall with a focused ion beam

Author:

Saraf Laxmikant V.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Effects of low ion dose on SE imaging and orientation dependent Ga-ion channeling;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2015-04

2. Dependence of the Electron Beam Energy and Types of Surface to Determine EBSD Indexing Reliability in Yttria-Stabilized Zirconia;Microscopy and Microanalysis;2012-02-16

3. Three-Dimensional EBSD Analysis of YSZ, NiO-YSZ and Ni-Alloy;MRS Proceedings;2012

4. Large area microcorrals and cavity formation on cantilevers using a focused ion beam;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-09

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