Irradiation effects of 25MeV silicon ions on SiGe heterojunction bipolar transistors
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference23 articles.
1. Silicon–Germanium Heterojunction Bipolar Transistors;Cressler,2003
2. Active 220- and 325-GHz Frequency Multiplier Chains in an SiGe HBT Technology
3. The total-dose-effects of gamma and proton irradiations on high-voltage silicon–germanium heterojunction bipolar transistors
4. Combined effect of bias and annealing in gamma and neutron radiation assurance tests of SiGe bipolar transistors for HEP applications
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Molecular dynamics simulations of displacement damage in SiGe alloys induced by single and binary primary knock-on atoms under different temperatures;Radiation Effects and Defects in Solids;2023-09-07
2. Three-dimensional simulation of total ionizing dose effect on SiGe heterojunction bipolor transistor;Acta Physica Sinica;2022
3. Characterizing and modeling current gain degradation in bipolar transistor exposed to heavy ion radiation;Materials Science in Semiconductor Processing;2021-01
4. Degradation and annealing characteristics of NPN SiGe HBT exposed to heavy ions irradiation;Radiation Physics and Chemistry;2019-12
5. Impact of finger numbers on the performance of proton-radiated SiGe power HBTs at room and cryogenic temperatures;Microelectronics Reliability;2018-12
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3