On artefacts in the secondary ion mass spectrometry profiling of high fluence H+ implants in GaAs
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference27 articles.
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2. SIMS as a new methodology to depth profile helium in as-implanted and annealed pure bcc metals?;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2017-05
3. SIMS and TEM investigation of hydrogen trapping on implantation defects in a nickel-based superalloy;Journal of Nuclear Materials;2015-11
4. SIMS depth profiling of implanted helium in pure iron using CsHe+ detection mode;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2013-01
5. A new quantitative method for gunshot residue analysis by ion beam analysis;The Analyst;2013
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