Effect of collision cascade density on radiation damage in SiC
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference15 articles.
1. Silica films on silicon carbide: a review of electrical properties and device applications
2. Advances in Silicon Carbide Processing and Applications;Hallén,2005
3. Cluster ion beam process technology – 20 years of R&D history
4. Damage buildup and the molecular effect in Si bombarded with PFn cluster ions
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