Damage buildup and the molecular effect in Si bombarded with PFn cluster ions-Reference-Cited by-同舟云学术

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Damage buildup and the molecular effect in Si bombarded with PFn cluster ions

Published:2007-03 Issue:1 Volume:256 Page:207-210
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Titov A.I.,Azarov A.Yu.,Nikulina L.M.,Kucheyev S.O.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference16 articles.

1. High density cascade effects

2. Molecule and cluster bombardment: energy loss, trajectories, and collision cascades

3. Low-energy cluster ion beam modification of surfaces

4. Damage accumulation in Si during N+ and bombardment along random and channeling directions

5. Damage creation in silicon single crystals irradiated with 200 keV/atom clusters

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5. The formation of radiation damage in GaN during successive bombardment by light ions of various energies;Vacuum;2020-03

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