Role of self-interstitials on B diffusion in Ge-Reference-Cited by-同舟云学术

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Role of self-interstitials on B diffusion in Ge

Published:2012-07 Issue: Volume:282 Page:8-11
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Scapellato G.G.,Bruno E.,Smith A.J.,Napolitani E.,De Salvador D.,Mirabella S.,Mastromatteo M.,Carnera A.,Gwilliam R.,Priolo F.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference25 articles.

1. Germanium-Based Technologies – From Materials to Devices;Claeys,2007

2. On the solubility and diffusivity of the intrinsic point defects in germanium

3. Self-Interstitial in Germanium

4. Diffusion and defect reactions between donors, C, and vacancies in Ge. I. Experimental results

5. Diffusion Mechanisms and Intrinsic Point-Defect Properties in Silicon

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Diffusion of boron in germanium at 800–900 °C revisited;Journal of Applied Physics;2020-01-14

2. Ion-Beam-Induced Atomic Mixing in Ge, Si, and SiGe, Studied by Means of Isotope Multilayer Structures;Materials;2017-07-17

3. Ion-beam induced atomic mixing in isotopically controlled silicon multilayers;Journal of Applied Physics;2016-11-14

4. Response to “Comment on ‘Diffusion of n-type dopants in germanium’ ” [Appl. Phys. Rev. 2, 036101 (2015)];Applied Physics Reviews;2015-09

5. Comment on “Diffusion of n-type dopants in germanium” [Appl. Phys. Rev.1, 011301 (2014)];Applied Physics Reviews;2015-09

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