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Performance of electronic devices submitted to X-rays and high energy proton beams

  • Published:2012-02 Issue: Volume:273 Page:135-138
  • ISSN:0168-583X
  • Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
  • language:en
  • Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Silveira M.A.G.,Cirne K.H.,Santos R.B.B.,Gimenez S.P.,Medina N.H.,Added N.,Tabacniks M.H.,Barbosa M.D.L.,Seixas L.E.,Melo W.,de Lima J.A.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ionizing radiation hardness tests of GaN HEMTs for harsh environments;Microelectronics Reliability;2021-01

2. Radiation Hardness of GaN HEMTs to TID Effects: COTS for harsh environments;2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS);2019-09

3. Analysis of SRAM-Based FPGA SEU Sensitivity to Combined EMI and TID-Imprinted Effects;IEEE Transactions on Nuclear Science;2016-04

4. Electric field and temperature effects in irradiated MOSFETs;AIP Conference Proceedings;2016

5. A Commercial off-the-shelf pMOS Transistor as X-ray and Heavy Ion Detector;Journal of Physics: Conference Series;2015-07-15
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