Implantation energy effect on photoluminescence spectroscopy of Si nanocrystals locally fabricated by stencil-masked ultra-low-energy ion-beam-synthesis in silica-Reference-Cited by-同舟云学术

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Implantation energy effect on photoluminescence spectroscopy of Si nanocrystals locally fabricated by stencil-masked ultra-low-energy ion-beam-synthesis in silica

Published:2012-02 Issue: Volume:272 Page:53-56
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Diaz R.,Suarez C.,Arbouet A.,Marty R.,Paillard V.,Gloux F.,Bonafos C.,Schamm-Chardon S.,Grisolia J.,Normand P.,Dimitrakis P.,BenAssayag G.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference10 articles.

1. Ion-beam Synthesis of Nanocrystals for Multidot Memory Structures

2. Photoluminescence characterization of few-nanocrystals electronic devices

3. Synthesis of localized 2D-layers of silicon nanoparticles embedded in a SiO2layer by a stencil-masked ultra-low energy ion implantation process

4. Deep-ultraviolet–microelectromechanical systems stencils for high-throughput resistless patterning of mesoscopic structures

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Application of stencil masks for ion beam lithographic patterning;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2013-07

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