Photoluminescence characterization of few-nanocrystals electronic devices-Reference-Cited by-同舟云学术

Photoluminescence characterization of few-nanocrystals electronic devices

Published:2006-12 Issue:2 Volume:121 Page:340-343
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Arbouet A.,Carrada M.,Demangeot F.,Paillard V.,BenAssayag G.,Bonafos C.,Claverie A.,Schamm S.,Dumas C.,Grisolia J.,Van den Boogaart M.A.F.,Brugger J.,Doeswijk L.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference7 articles.

1. Waveguiding effects in the measurement of optical gain in a layer of Si nanocrystals

2. Silicon optical nanocrystal memory

3. Fabrication of a germanium quantum-dot single-electron transistor with large Coulomb-blockade oscillations at room temperature

4. Si nanocrystals by ultra-low-energy ion beam-synthesis for non-volatile memory applications

5. Room-temperature quantum effect in silicon nanoparticles obtained by low-energy ion implantation and embedded in a nanometer scale capacitor

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1. Structural and optical properties of 70-keV carbon ion beam synthesized carbon nanoclusters in thermally grown silicon dioxide;Applied Physics A;2014-09-18

2. Origin of room temperature broadband light emission and carrier dynamics in Ag ion-implanted Silicon nanocrystals;Optical Materials Express;2012-04-02

3. Implantation energy effect on photoluminescence spectroscopy of Si nanocrystals locally fabricated by stencil-masked ultra-low-energy ion-beam-synthesis in silica;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-02

4. Broad band light emission from Ag-ion implanted silicon nanocrystals;Solid State Communications;2011-10

5. Localized Surface Plasmon Polariton Enhanced Radiative Recombination in Ion-Implanted Silicon Emitters;Applied Physics Express;2010-09-17