On the anomalous generation of {0 0 1} loops during laser annealing of ion-implanted silicon
Author:
Funder
FEDER
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference25 articles.
1. A systematic analysis of defects in ion-implanted silicon
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1. STEM analysis of deformation and B distribution In nanosecond laser ultra-doped Si1−xBx;Semiconductor Science and Technology;2023-02-08
2. Materials science issues related to the fabrication of highly doped junctions by laser annealing of Group IV semiconductors;Laser Annealing Processes in Semiconductor Technology;2021
3. Atomistic modeling of laser-related phenomena;Laser Annealing Processes in Semiconductor Technology;2021
4. {001} loops in silicon unraveled;Acta Materialia;2019-03
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