Scanning spreading resistance microscopy of shallow doping profiles in silicon
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference9 articles.
1. A Spreading Resistance Technique for Resistivity Measurements on Silicon
2. Towards sub-10 nm carrier profiling with spreading resistance techniques
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5. Active dopant characterization methodology for germanium
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2. On the effects of a pressure induced amorphous silicon layer on consecutive spreading resistance microscopy scans of doped silicon;Journal of Applied Physics;2015-06-28
3. MICROSCOPIA DE FORÇA ATÔMICA: UMA PODEROSA FERRAMENTA PARA CARACTERIZAÇÃO ELÉTRICA;Técnicas de Nanocaracterização;2015
4. Analysis technique for ultra shallow junction using medium energy ion scattering time-of-flight elastic recoil detection analysis;Surface and Interface Analysis;2014-06-11
5. Three-Dimensional Carrier Profiling of Individual Si Nanowires by Scanning Spreading Resistance Microscopy;Advanced Materials;2010-08-16
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